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參數(shù)資料
| 型號： | 2SC5809 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Shrink Tubing; Tubing Size Diameter:0.75"; Wall Thickness Recovered Nominal:0.065"; Inner Diameter Max Recovered:0.313"; Expanded Inner Diameter:0.750"; Material:Polyolefin |
| 中文描述： | 3 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220D-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 78K |
| 代理商： | 2SC5809 |
Power Transistors
2SC5809
Silicon NPN triple diffusion planar type
1
Publication date: November 2002
SJD00291AED
For high breakdown voltage high-speed switching
■
Features
High-speed switching (Fall time t
f
is short)
High collector-base voltage (Emitter open) V
CBO
Low collector-emitter saturation voltage V
CE(sat)
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
1.4
±
0.2
1.6
±
0.2
0.8
±
0.1
0.55
±
0.15
2.54
±
0.30
5.08
±
0.50
1
2
3
2.6
±
0.1
2.9
±
0.2
4.6
±
0.2
φ
3.2
±
0.1
3
±
0
9.9
±
0.3
1
±
0
1
±
0
4
±
0
S
Unit: mm
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
B
C
E
Marking Symbol: C5809
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
800
V
Collector-emitter voltage (Base open)
V
CEO
500
V
Emitter-base voltage (Collector open)
V
EBO
I
C
8
V
Collector current
3
A
Peak collector current
I
CP
6
A
Collector power
dissipation
T
C
=
25
°
C
T
a
=
25
°
C
P
C
30
W
2
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
10 mA, I
B
=
0
V
CB
=
800 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
0.1 A
V
CE
=
5 V, I
C
=
3 A
I
C
=
3 A, I
B
=
0.6 A
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
3.0 A, Resistance loaded
I
B1
=
0.6 A, I
B2
=
0.6 A
V
CC
=
200 V
500
V
Collector-base cutoff current (Emitter open)
I
CBO
100
μ
A
μ
A
Emitter-base cutoff current (Collector open)
I
EBO
h
FE1
100
Forward current transfer ratio
15
h
FE2
8
Collector-emitter saturation voltage
V
CE(sat)
f
T
0.3
0.6
V
Transition frequency
8
MHz
Turn-on time
t
on
1.1
μ
s
μ
s
μ
s
Storage time
t
stg
t
f
2.0
Fall time
0.3
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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