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參數(shù)資料
| 型號(hào)： | 2SC5819 |
| 廠商： | Toshiba Corporation |
| 元件分類： | DC/DC變換器 |
| 英文描述： | High-Speed Switching Applications DC-DC Converter Applications |
| 中文描述： | 高速開關(guān)應(yīng)用DC - DC轉(zhuǎn)換器應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 124K |
| 代理商： | 2SC5819 |
2SC5819
2001-12-17
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5819
High-Speed Switching Applications
DC-DC Converter Applications
High DC current gain: h
FE
= 400 to 1000 (I
C
= 0.15 A)
Low collector-emitter saturation voltage: V
CE (sat)
= 0.12 V (max)
High-speed switching: t
f
= 45 ns (typ.)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
40
V
Collector-emitter voltage
V
CEX
30
V
Collector-emitter voltage
V
CEO
20
V
Emitter-base voltage
V
EBO
7
V
DC
I
C
1.5
Collector current
Pulse
I
CP
2.5
A
Base current
I
B
150
mA
t 10 s
2.0
Collector power
dissipation
DC
P
C
(Note 1)
1.0
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
40 V, I
E
0
100
nA
Emitter cut-off current
I
EBO
V
EB
7 V, I
C
0
100
nA
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
10 mA, I
B
0
20
V
h
FE
(1)
V
CE
2 V, I
C
0.15 A
400
1000
DC current gain
h
FE
(2)
V
CE
2 V, I
C
0.5 A
200
Collector-emitter saturation voltage
V
CE (sat)
I
C
0.5 A, I
B
10 mA
0.12
V
Base-emitter saturation voltage
V
BE (sat)
I
C
0.5 A, I
B
10 mA
1.10
V
Collector output capacitance
C
ob
V
CB
10 V, I
E
0, f 1 MHz
18
pF
Rise time
t
r
43
Storage time
t
stg
295
Switching time
Fall time
t
f
See Figure 1 circuit diagram.
V
CC
12 V, R
L
24
I
B1
I
B2
17 mA
45
ns
Industrial Applications
Unit: mm
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
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|---|---|
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| 2SC5824T100Q | 功能描述:兩極晶體管 - BJT NPN 60V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5824T100R | 功能描述:兩極晶體管 - BJT NPN 60V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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