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參數(shù)資料
| 型號： | 2SC5791 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | IC - FLASH, 128 MBIT (8M X 16/4M X 32), 3.3V, 80 F |
| 中文描述： | 超高清晰度CRT顯示器水平偏轉(zhuǎn)輸出應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2SC5791 |
2SC5791
No.6993-1/4
Features
High speed.
High breakdown voltage(VCBO=1600V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
Unit
V
V
V
A
A
W
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
1600
800
5
10
25
3.0
80
150
Collector Dissipation
PC
Tc=25
°
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
ICBO
ICES
V(BR)CEO
IEBO
VCB=800V, IE=0
VCE=1600V, RBE=0
IC=10mA, RBE=
∞
VEB=4V, IC=0
10
1.0
μ
A
mA
V
mA
Collector-to-Emitter Breakdown Voltage
Emitter Cutoff Current
800
1.0
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6993A
2SC5791
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Package Dimensions
unit : mm
2174A
[2SC5791]
52003 TS IM TA-100440 / 62001 TS IM TA-3324
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
2
5
2
0
2
4
16.0
3.4
2.0
2.8
2.1
5.45
5.45
0.7
0.9
3
8
5.6
3.1
1
2
3
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