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| 型號： | 2SC5788 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type |
| 中文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-4-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 73K |
| 代理商： | 2SC5788 |
Power Transistors
2SC5788
Silicon NPN epitaxial planar type
1
Publication date: November 2002
SJD00290AED
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■
Features
High-speed switching (t
stg
: storage time/t
f
: fall time is short)
Low collector to emitter saturation voltage V
CE(sat)
Superior forward current transfer ratio h
FE
linearity
Allowing automatic insertion with radial taping
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
10.0
±
0.2
0.65
±
0.1
0.35
±
0.1
2.5
±
0.2
1
2
3
0.65
±
0.1
1.2
±
0.1
1.48
±
0.2
2.25
±
0.2
C 1.0
0.55
±
0.1
0.55
±
0.1
2.5
±
0.2
1.05
±
0.1
1
±
0
4
±
0
1
±
0
S
5.0
±
0.1
2
±
0
9
1.0
±
0.2
Unit: mm
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Rank
P
Q
h
FE1
160 to 320
120 to 250
Internal Connection
B
C
E
Marking Symbol: C5788
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
V
Collector-emitter voltage (Base open)
V
CEO
60
V
Emitter-base voltage (Collector open)
V
EBO
I
C
6
V
Collector current
3
A
Peak collector current
I
CP
6
A
Collector power
dissipation
T
C
=
25
°
C
T
a
=
25
°
C
P
C
15
W
2
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55
～ +
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
10 mA, I
B
=
0
V
CB
=
60 V, I
E
=
0
V
CE
=
60 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
3 A
I
C
=
3 A, I
B
=
375 mA
V
CE
=
10 V, I
C
=
0.1 A, f
=
10 MHz
I
C
=
1 A, Resistance loaded
I
B1
=
0.1 A, I
B2
=
0.1 A
V
CC
=
50 V
60
V
Collector-base cutoff current (Emitter open)
I
CBO
100
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
I
EBO
h
FE1*
100
Emitter-base cutoff current (Collector open)
1
mA
Forward current transfer ratio
120
320
h
FE2
V
CE(sat)
40
Collector-emitter saturation voltage
0.8
V
Transition frequency
f
T
180
MHz
Turn-on time
t
on
t
stg
0.2
0.3
μ
s
μ
s
μ
s
Storage time
0.55
0.7
Fall time
t
f
0.1
0.15
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
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