參數(shù)資料
型號(hào): 2SC5593
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial High Frequency Low Noise Amplifier
中文描述: 硅外延npn型高頻低噪聲放大器
文件頁數(shù): 6/9頁
文件大?。?/td> 55K
代理商: 2SC5593
2SC5593
6
S-parameter
( V
CE
= 2 V, I
C
= 10 mA, Zo = 50
)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.804
–8.2
22.02
172.5
0.00305
94.6
0.993
–3.4
200
0.795
–17.8
21.55
165.0
0.0067
86.8
0.986
–8.1
300
0.776
–27.4
20.88
157.5
0.0107
85.4
0.972
–12.7
400
0.746
–35.8
20.05
150.2
0.0146
82.5
0.947
–17.2
500
0.714
–44.5
18.93
143.7
0.0182
78.4
0.917
–21.2
600
0.673
–53.2
17.84
137.9
0.0215
74.8
0.881
–25.1
700
0.632
–59.9
16.60
132.5
0.0249
71.8
0.842
–28.3
800
0.595
–67.1
15.69
127.9
0.0274
67.9
0.808
–31.2
900
0.557
–74.6
14.64
123.5
0.0296
65.1
0.763
–33.7
1000
0.519
–79.1
13.68
119.5
0.0319
63.6
0.729
–35.6
1100
0.488
–86.0
12.88
116.0
0.0337
61.6
0.696
–37.2
1200
0.454
–91.1
12.03
112.8
0.0350
60.4
0.666
–38.6
1300
0.430
–95.9
11.26
110.6
0.0366
58.8
0.644
–39.5
1400
0.403
–101.8
10.69
107.8
0.0382
57.4
0.619
–40.6
1500
0.377
–106.3
10.16
105.4
0.0401
56.6
0.598
–41.2
1600
0.364
–111.0
9.66
103.6
0.0410
56.3
0.581
–42.0
1700
0.346
–116.6
9.19
101.4
0.0422
55.6
0.564
–42.6
1800
0.327
–120.0
8.79
99.3
0.0435
55.2
0.550
–43.2
1900
0.313
–124.9
8.40
97.5
0.0447
55.2
0.537
–43.9
2000
0.296
–130.8
7.99
95.5
0.0457
54.8
0.525
–44.0
相關(guān)PDF資料
PDF描述
2SC5594 Silicon NPN Epitaxial High Frequency Low Noise Amplifier
2SC5606-T1 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
2SC5610 NPN Epitaxial Planar Silicon Transistor for DC/DC Converter Applications(用于DC/DC變換器的NPN硅外延平面型晶體管)
2SA2022 DC/DC Converter Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5606-A 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿(最大值):3.3V 頻率 - 躍遷:21GHz 噪聲系數(shù)(dB,不同 f 時(shí)的典型值):1.2dB @ 2GHz 增益:12.5dB 功率 - 最大值:115mW 不同?Ic,Vce?時(shí)的 DC 電流增益(hFE)(最小值):60 @ 5mA,2V 電流 - 集電極(Ic)(最大值):35mA 安裝類型:表面貼裝 封裝/外殼:SOT-523 供應(yīng)商器件封裝:- 標(biāo)準(zhǔn)包裝:1
2SC5606-FB-A 制造商:Renesas Electronics Corporation 功能描述:
2SC5606-T1-A 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包裝:剪切帶(CT) 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿(最大值):3.3V 頻率 - 躍遷:21GHz 噪聲系數(shù)(dB,不同 f 時(shí)的典型值):1.2dB @ 2GHz 增益:14dB 功率 - 最大值:115mW 不同?Ic,Vce?時(shí)的 DC 電流增益(hFE)(最小值):60 @ 5mA,2V 電流 - 集電極(Ic)(最大值):35mA 安裝類型:表面貼裝 封裝/外殼:SOT-523 供應(yīng)商器件封裝:SOT-523 標(biāo)準(zhǔn)包裝:1
2SC5606-T1-A-FB 制造商:Renesas Electronics Corporation 功能描述:
2SC5611 制造商:Sony Semiconductor Solutions Division 功能描述: