- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370084 > 2SC5606-T1 (NEC Corp.) NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD PDF資料下載
參數(shù)資料
| 型號： | 2SC5606-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
| 中文描述： | NPN硅射頻晶體管·低噪聲高增益放大3針Ultra超MINIMOLD |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 68K |
| 代理商： | 2SC5606-T1 |
PRELIMINARY DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14658EJ2V0DS00 (2nd edition)
Date Published April 2000 NS CP(K)
Printed in Japan
NPN SILICON RF TRANSISTOR
2SC5606
NPN SILICON RF TRANSISTOR FOR
LOW NOISE · HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD
1999, 2000
The mark
shows major revised points.
FEATURES
Suitable for high-frequency oscillation
f
T
= 25 GHz technology adopted
3-pin ultra super minimold
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5606
50 pcs (Non reel)
8 mm wide embossed taping
2SC5606-T1
3 kpcs/reel
Pin 3 (collector) face the perforation side of the tape
Remark
To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
15
V
Collector to Emitter Voltage
V
CEO
3.3
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
35
mA
Total Power Dissipation
P
tot
Note
115
mW
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
65 to +150
°
C
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy substrate
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5606 | NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
| 2SC5610 | NPN Epitaxial Planar Silicon Transistor for DC/DC Converter Applications(用于DC/DC變換器的NPN硅外延平面型晶體管) |
| 2SA2022 | DC/DC Converter Applications |
| 2SC5623 | SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER |
| 2SC5624 | Silicon NPN Epitaxial High Frequency Low Noise Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5606-T1-A | 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:3.3V 頻率 - 躍遷:21GHz 噪聲系數(shù)（dB，不同 f 時的典型值）:1.2dB @ 2GHz 增益:14dB 功率 - 最大值:115mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:60 @ 5mA，2V 電流 - 集電極（Ic）（最大值）:35mA 安裝類型:表面貼裝 封裝/外殼:SOT-523 供應(yīng)商器件封裝:SOT-523 標準包裝:1 |
| 2SC5606-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5611 | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 2SC5612 | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SC5612LB228 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTORSUBBING WITH B1BAJW000001 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。