參數(shù)資料
型號： 2SC5606-T1
廠商： NEC Corp.
英文描述： NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
中文描述： NPN硅射頻晶體管·低噪聲高增益放大3針Ultra超MINIMOLD
文件頁數(shù)： 2/16頁
文件大小： 68K
代理商： 2SC5606-T1
Preliminary Data Sheet P14658EJ2V0DS00
2
2SC5606
ELECTRICAL CHARACTERISTICS (T
A
= +25
°
C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0 mA
–
–
200
nA
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0 mA
–
–
200
nA
DC Current Gain
h
FE
Note 1
V
CE
= 2 V, I
C
= 5 mA
50
70
100
–
RF Characteristics
Gain Bandwidth Product
f
T
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
–
21
–
GHz
Insertion Power Gain
S
21e
2
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
10
12.5
–
dB
Noise Figure
NF
–
1.2
1.5
dB
Reverse Transfer Capacitance
C
re
Note 2
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
–
0.21
0.3
pF
Maximum Available Gain
MAG.
Note 3
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
–
14
–
dB
Maximum Stable Power Gain
MSG.
Note 4
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
–
15
–
dB
Note 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2 %
2.
Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
3.
MAG. =
4.
MSG. =
h
FE
CLASSIFICATION
Rank
FB
Marking
UA
h
FE
50 to 100
(k –
√
(k
2
– 1) )
S
21
S
12
S
21
S
12
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5606-T1-A 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:3.3V 頻率 - 躍遷:21GHz 噪聲系數(shù)（dB，不同 f 時的典型值）:1.2dB @ 2GHz 增益:14dB 功率 - 最大值:115mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:60 @ 5mA，2V 電流 - 集電極（Ic）（最大值）:35mA 安裝類型:表面貼裝 封裝/外殼:SOT-523 供應(yīng)商器件封裝:SOT-523 標(biāo)準(zhǔn)包裝:1
2SC5606-T1-A-FB 制造商:Renesas Electronics Corporation 功能描述:
2SC5611 制造商:Sony Semiconductor Solutions Division 功能描述:
2SC5612 制造商:Toshiba America Electronic Components 功能描述: 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR
2SC5612LB228 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTORSUBBING WITH B1BAJW000001
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