- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370083 > 2SC5509 (NEC Corp.) NPN SILICON RF TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SC5509 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON RF TRANSISTOR |
| 中文描述： | NPN硅射頻晶體管 |
| 文件頁數(shù)： | 1/15頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 2SC5509 |
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC5509
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER
LOW NOISE
HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
Document No. PU10009EJ01V0DS (1st edition)
Date Published October 2001 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2001
FEATURES
Ideal for medium output power amplification
NF = 1.2 dB TYP., G
a
= 12 dB TYP. @ V
CE
= 2 V, I
C
= 10 mA, f = 2 GHz
Maximum available power gain: MAG = 14 dB TYP. @ V
CE
= 2 V, I
C
= 50 mA, f = 2 GHz
f
T
= 25 GHz technology adopted
Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5509
50 pcs (Non reel)
8 mm wide embossed taping
2SC5509-T2
3 kpcs/reel
Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
15
V
Collector to Emitter Voltage
V
CEO
3.3
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
tot
Note
190
mW
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
65 to +150
°
C
Note
Free Air
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5509-T2 | NPN SILICON RF TRANSISTOR |
| 2SC5511 | High-Voltage Switching Transistor(高電壓開關晶體管) |
| 2SC5525 | High-speed Switching Transistor(高速開關晶體管) |
| 2SC5526 | High-speed Switching Transistor(高速開關晶體管) |
| 2SC5531 | High-Voltage Switching Transistor(高電壓開關晶體管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5509-A | 功能描述:RF TRANSISTOR NPN SOT-343F 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:3.3V 頻率 - 躍遷:15GHz 噪聲系數(shù)（dB，不同 f 時的典型值）:1.2dB @ 2GHz 增益:14dB 功率 - 最大值:190mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 10mA，2V 電流 - 集電極（Ic）（最大值）:100mA 安裝類型:表面貼裝 封裝/外殼:SOT-343F 供應商器件封裝:- 標準包裝:1 |
| 2SC5509-T2-A | 功能描述:RF TRANSISTOR NPN SOT-343F 制造商:cel 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:3.3V 頻率 - 躍遷:15GHz 噪聲系數(shù)（dB，不同 f 時的典型值）:1.2dB @ 2GHz 增益:14dB 功率 - 最大值:190mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 10mA，2V 電流 - 集電極（Ic）（最大值）:100mA 安裝類型:表面貼裝 封裝/外殼:SOT-343F 供應商器件封裝:SOT-343 標準包裝:1 |
| 2SC5509-T2-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5517000LK | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5521 | 制造商:JVC Worldwide 功能描述:TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。