參數(shù)資料
型號: 2SC5525
廠商: Rohm CO.,LTD.
英文描述: High-speed Switching Transistor(高速開關(guān)晶體管)
中文描述: 高速開關(guān)晶體管(高速開關(guān)晶體管)
文件頁數(shù): 1/1頁
文件大?。?/td> 58K
代理商: 2SC5525
2SC5103 / 2SC5525
Transistors
High-speed Switching Transistor (60V, 5A)
2SC5103 / 2SC5525
!
Features
1) Low V
CE(sat)
(Typ. 0.15V at I
C
/ I
B
=
3 / 0.15A)
2) High speed switching (tf : Typ. 0.1
μ
s at I
C
=
3A)
3) Wide SOA. (safe operating area)
4) Complements the 2SA1952 / 2SA2006.
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
100
60
5
5
10
1
10
2
25
150
55
~ +
150
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc
=
25
°
C)
*
W
2SC5103
2SC5525
W(Tc=25
°
C)
°
C
°
C
Single pulse Pw=100ms
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
2SC5103
CPT3
PQ
TL
2500
2SC5525
TO-220FN
EF
500
Basic ordering unit (pieces)
!
External dimensions
(Units : mm)
2
0
1
0
9.5
2.5
0.8Min.
1.5
6
2
(
(
C0.5
0
0.9
(
0
2
0
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
ROHM : CPT3
EIAJ : SC-63
ROHM : TO-220FN
2SC5525
2SC5103
5
(3) Emitter(Source)
(2) Collector(Drain)
0.75
0.8
2.54
(3)
(1)
(3)
(2)
(1)
2.54
(2)
5
8
1
1
1
1.3
1.2
10.0
3.2
φ
2.6
4.5
2.8
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
t
on
t
stg
t
f
100
60
5
82
100
0.15
120
80
0.1
10
10
0.3
0.5
270
320
V
V
V
μ
A
μ
A
V
V
MHz
pF
μ
s
μ
s
μ
s
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
100V
V
EB
=
5V
I
C
/I
B
=
3A/0.15A
I
C
/I
B
=
4A/0.2A
V
BE(sat)
1.2
1.5
V
V
I
C
/I
B
=
3A/0.15A
I
C
/I
B
=
4A/0.2A
V
CE
/I
C
=
2V/1A
2SC5103
2SC5525
V
CB
=
10V , I
E
=
0.5A , f
=
30MHz
V
CE
=
10V , I
E
=
0A , f
=
1MHz
I
C
=
3A , R
L
=
10
I
B1
=
I
B2
=
0.15A
V
CC
30V
0.3
1.5
0.3
Measured using pulse current.
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Base-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Collector-base breakdown voltage
相關(guān)PDF資料
PDF描述
2SC5526 High-speed Switching Transistor(高速開關(guān)晶體管)
2SC5531 High-Voltage Switching Transistor(高電壓開關(guān)晶體管)
2SC5532 High-Voltage Switching Transistor(高電壓開關(guān)晶體管)
2SC5534 UHF to S Band Low-Noise Amplifier, OSC Applications
2SC5536 VHF Low-Noise Amplifier , OSC Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5536A-TL-H 功能描述:兩極晶體管 - BJT BIP NPN 50MA 12V FT=1.7G RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5548(Q) 制造商:Toshiba 功能描述:NPN 370V 2A 50 to 120 PW-Mold
2SC5548A(Q) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 400V 2A 3-Pin(2+Tab) PW-Mold
2SC5548A(TE16L1,NQ 制造商:Toshiba 功能描述:NPN 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 400V 2A for SMPS PW-Mold
2SC5549(TPE6,F) 制造商:Toshiba 功能描述:NPN 制造商:Toshiba 功能描述:NPN Cut Tape