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參數(shù)資料
| 型號： | 2SC5507-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
| 中文描述： | NPN硅射頻晶體管，低噪聲，高增益放大平引腳4引腳薄型超小型，低電流模 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 91K |
| 代理商： | 2SC5507-T2 |
Preliminary Data Sheet P13864EJ1V0DS00
4
2SC5507
Gain Characteristics
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Frequency
Insertion Power Gain, Maximum Stable Power Gain
vs. Collector Current
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Collector Current
40
35
30
25
20
15
10
5
0
30
25
20
15
10
5
0
30
25
20
15
10
5
0
Frequency f (GHz)
I
2
|
2
M
M
I
|
2
|
2
(
M
I
2
|
2
M
M
0.1
1.0
10.0
1
10
100
1
10
100
MAG
MSG
|S
21e
|
2
V
CE
= 2 V
I
C
= 5 mA
MSG
|S
21e
|
2
MSG
|S
21e
|
2
MAG
f = 2 GHz
V
CE
= 2 V
f = 1 GHz
V
CE
= 2 V
Output Characteristics
Input Power P
in
(dBm)
Output Power, Collector Current vs. Input Power
10
5
0
–5
–10
–15
25
20
15
10
5
0
25
20
15
10
5
0
O
o
C
C
–30
–25
–20
–15
–10
–5
P
out
I
C
f = 1 GHz
V
CE
= 2 V
Input Power P
in
(dBm)
Output Power, Collector Current vs. Input Power
10
5
0
–5
–10
–15
O
o
C
C
–30
–25
–20
–15
–10
–5
P
out
I
C
f = 2 GHz
V
CE
= 2 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5507(NE661M04) | Discrete |
| 2SC5508 | NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
| 2SC5508-T2 | NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
| 2SC5509 | NPN SILICON RF TRANSISTOR |
| 2SC5509-T2 | NPN SILICON RF TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5507-T2-A | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape |
| 2SC5507-T2-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5508-A | 功能描述:RF TRANSISTOR NPN SOT-343F 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:3.3V 頻率 - 躍遷:25GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1.1dB @ 2GHz 增益:19dB 功率 - 最大值:115mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:50 @ 5mA，2V 電流 - 集電極（Ic）（最大值）:35mA 安裝類型:表面貼裝 封裝/外殼:SOT-343F 供應(yīng)商器件封裝:- 標(biāo)準(zhǔn)包裝:1 |
| 2SC5508-T2-A | 制造商:Renesas Electronics 功能描述:Trans GP BJT NPN 3.3V 0.035A 4-Pin Thin-Type Super Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,3.3V,35mA,S-MiniMold4 制造商:Renesas 功能描述:Trans GP BJT NPN 3.3V 0.035A 4-Pin Thin-Type Super Mini-Mold T/R |
| 2SC5508-T2-A(FB) | 制造商:Renesas Electronics 功能描述:NPN |
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