參數(shù)資料
型號： 2SC5507-T2
廠商： NEC Corp.
英文描述： NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
中文描述： NPN硅射頻晶體管，低噪聲，高增益放大平引腳4引腳薄型超小型，低電流模
文件頁數(shù)： 2/12頁
文件大?。?/td> 91K
代理商： 2SC5507-T2
Preliminary Data Sheet P13864EJ1V0DS00
2
2SC5507
ELECTRICAL CHARACTERISTICS (T
A
= +25 °C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC characteristics
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0
–
–
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0
–
–
100
nA
DC Current Gain
h
FE
Note 1
V
CE
= 2 V, I
C
= 5 mA
50
70
100
–
RF Characteristics
Reverse Transfer Capacitance
C
re
Note 2
V
CB
= 2 V, I
E
= 0, f = 1 MHz
–
0.08
0.12
pF
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
20
25
–
GHz
Noise Figure
NF
V
CE
= 2 V, I
C
= 2 mA, f = 2 GHz, Z
S
= Z
opt
–
1.2
1.5
dB
Insertion Power Gain
|
S
21e
|
2
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
14
17
–
dB
Maximum Stable Power Gain
MSG
Note 3
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
–
22
–
dB
Output Power at 1 dB
Compression Point
P
-1
V
CE
= 2 V, I
C
= 5 mA
Note 4
, f = 2 GHz
–
5
–
dBm
Output Power at Third Order
Intercept Point
OIP
3
V
CE
= 2 V, I
C
= 5 mA
Note 4
, f = 2 GHz
–
15
–
–
Notes 1.
Pulse measurement PW
≤
350
μ
s, Duty cycle
≤
2%
2.
Emitter to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
S
21
MSG =
S
12
4.
Collector current when P
-1
is output
3.
h
FE
CLASSIFICATION
Rank
FB
Marking
T78
h
FE
50 to 100
相關(guān)PDF資料
PDF描述
2SC5507(NE661M04) Discrete
2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
2SC5508-T2 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
2SC5509 NPN SILICON RF TRANSISTOR
2SC5509-T2 NPN SILICON RF TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5507-T2-A 制造商:Renesas Electronics Corporation 功能描述:Cut Tape
2SC5507-T2-A-FB 制造商:Renesas Electronics Corporation 功能描述:
2SC5508-A 功能描述:RF TRANSISTOR NPN SOT-343F 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:3.3V 頻率 - 躍遷:25GHz 噪聲系數(shù)（dB，不同 f 時的典型值）:1.1dB @ 2GHz 增益:19dB 功率 - 最大值:115mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 5mA，2V 電流 - 集電極（Ic）（最大值）:35mA 安裝類型:表面貼裝 封裝/外殼:SOT-343F 供應(yīng)商器件封裝:- 標(biāo)準(zhǔn)包裝:1
2SC5508-T2-A 制造商:Renesas Electronics 功能描述:Trans GP BJT NPN 3.3V 0.035A 4-Pin Thin-Type Super Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,3.3V,35mA,S-MiniMold4 制造商:Renesas 功能描述:Trans GP BJT NPN 3.3V 0.035A 4-Pin Thin-Type Super Mini-Mold T/R
2SC5508-T2-A(FB) 制造商:Renesas Electronics 功能描述:NPN
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