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參數(shù)資料
| 型號(hào)： | 2SC535 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial Planar |
| 中文描述： | 硅瑞展 |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | 2SC535 |
2SC535
9
Input Admittance vs. Collector Current
Collector Current I
C
(mA)
I
i
y
ie
= g
+ jb
ie
V
= 6 V
f = 100 MHz
20
10
5
2
1.0
0.5
0.2
0.1
0.5
2
10
0.2
1.0
5
b
ie
g
ie
Reverse Transfer Admittance vs.
Collector to Emitter Voltage
Collector to Emitter Voltage V
CE
(V)
R
r
R
r
–1.0
–0.1
–0.05
–0.02
–0.01
–0.005
–5
–0.2
–0.1
–0.05
1
5
20
2
10
y
re
= g
+ jb
re
I
= 1 mA
f = 100 MHz
b
re
g
re
y
re
= g
+ jb
re
V
= 6 V
f = 100 MHz
Reverse Transrer Admittance vs.
Collector Current
Collector Current I
C
(mA)
R
r
R
r
b
re
g
re
–1.0
–0.5
–0.2
–0.1
–0.05
–0.02
–0.01
–0.1
–0.05
–0.02
–0.01
–0.005
–0.002
–0.001
0.1
0.5
2
10
0.2
1.0
5
Forward Transfer Admittance vs.
Collector to Emitter Voltage
Collector to Emitter Voltage V
CE
(V)
F
i
100
50
20
10
5
1
5
20
2
10
y
fe
= g
+ jb
fe
I
C
= 1 mA
f = 100 MHz
–b
fe
g
fe
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5351 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type High-Voltage Switching Applications |
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