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參數(shù)資料
| 型號： | 2SC535 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial Planar |
| 中文描述： | 硅瑞展 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 2SC535 |
2SC535
8
Reverse Transfer Admittance
Characteristics
Reverse Transfer Conductance g
re
(mS)
–0.20
f = 50 MHz
70
100
150
200
I
C
= 5 mA 3 21
–1.0
–0.8
–0.6
–0.4
–0.2
0
–0.04
–0.16
–0.12
–0.08
y
re
= g
+ jb
re
V
CE
= 6 V
R
r
Forward Transfer Admittance
Characteristics
Forward Transfer Conductance g
fe
(mS)
–120
–100
–80
–60
–40
–20
I
C
= 1 mA
2 mA
3 mA
5 mA
200
150
100
70
0
20
60
40
80
y
fe
= g
+ jb
fe
V
CE
= 6 V
120
100
F
f
f = 50 MHz
Output Admittance Characteristics
Output Conductance g
oe
(mS)
y
oe
= g
oe
+ jb
oe
V
CE
= 6 V
I
C
= 1 mA
2
3
5
2.4
2.0
1.6
1.2
0.8
0.4
0
0.1
0.6
0.4
0.3
0.2
0.5
O
o
150
100
70
50
f = 200 MHz
Input Admittance vs. Collector
to Emitter Voltage
Collector to Emitter Voltage V
CE
(V)
I
i
10
5
2
1.0
0.5
1
5
20
2
10
y
ie
= g
+ jb
ie
I
= 1 mA
f = 100 MHz
b
ie
g
ie
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參數(shù)描述 |
|---|---|
| 2SC5351 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type High-Voltage Switching Applications |
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