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參數(shù)資料
| 型號： | 2SC535 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial Planar |
| 中文描述： | 硅瑞展 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 2SC535 |
2SC535
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
4
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
h
FE
*
1
V
BE
V
CE(sat)
—
—
0.5
μ
A
V
CB
= 10 V, I
E
= 0
V
CE
= 6 V, I
C
= 1 mA
V
CE
= 6 V, I
C
= 1 mA
I
C
= 20 mA, I
B
=4 mA
DC current transfer ratio
60
—
200
Base to emitter voltage
—
0.72
—
V
Collector to emitter saturation
voltage
—
0.17
—
V
Gain bandwidth product
f
T
Cob
450
940
—
MHz
V
CE
= 6 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
= 6 V, I
= 1 mA,
f = 100 MHz
Collector output capacitance
—
0.9
1.2
pF
Power gain
PG
17
20
—
dB
Noise figure
NF
—
3.5
5.5
dB
V
= 6 V, I
= 1 mA,
f = 100 MHz, R
g
= 50
V
= 6 V, I
= 1 mA,
f = 100 MHz
Input admittance (typ)
yie
1.3 + j5.3
mS
Reverse transfer admittance
(typ)
yre
–0.078 – j0.41
mS
Foward transfer admittance
(typ)
yfe
32 – j10
mS
Output admittance (typ)
Note:
1. The 2SC535 is grouped by h
FE
as follows.
B
C
yoe
0.08 + j0.82
mS
60 to 120
100 to 200
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