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參數(shù)資料
| 型號(hào)： | 2SC536N |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier Applications(低頻通用放大器應(yīng)用的NPN硅外延平面型晶體管) |
| 中文描述： | 瑞展硅晶體管低頻通用放大器應(yīng)用（低頻通用放大器應(yīng)用的npn型硅外延平面型晶體管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 40K |
| 代理商： | 2SC536N |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
2SA608N/2SC536N
Low-Frequency
General-Purpose Amplifier Applications
Ordering number:ENN6324
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10700TS (KOTO) TA-2543 No.6324–1/4
Package Dimensions
unit:mm
2164
[2SA608N/2SC536N]
C
C
Electrical Characteristics
at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : NPA-WA
Applications
· Capable of being used in the low frequency to high
frequency range.
Features
· Large current capacity and wide ASO.
( ) : 2SA608N
Specifications
Absolute Maximum Ratings
at Ta = 25C
Continued on next page.
* The 2SA608N/2SC536N are classified by 1mA h
FE
as follow
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SC536NF-NPA-AT | 功能描述:兩極晶體管 - BJT BIP NPN 0.15A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC536NG-NPA-AT | 功能描述:兩極晶體管 - BJT BIP NPN 0.15A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC536NP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SC536NPD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SC536NPE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 |
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