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參數(shù)資料
| 型號(hào)： | 2SC5337 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
| 中文描述： | npn型外延硅晶體管高頻低失真功率放大器 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | 2SC5337 |
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2SC5337
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CB -
Collector to Bese Voltage - V
0.5
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2.0
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5.0
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V
CE -
Collector to Emitter Voltage - V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
h
F
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I
C -
Collector Current - mA
C
r
f = 1.0 MH
Z
I
C -
Collector Current - mA
f
T
Z
I
C -
Collector Current - mA
S
2
2
-
M
f - Frequency - GH
Z
S
21e
2
MAG
V
CE
= 10 V
I
C
= 50 mA
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
INSERTION POWER GAIN
MAXIMUM AVAILABLE GAIN vs. FREQUENCY
V
CE
= 10 V
I
B
= 0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
V
CE
= 10 V
f = 1 GH
Z
V
CE
= 10 V
f = 1 GH
Z
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
S
2
2
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5338 | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
| 2SC535 | Silicon NPN Epitaxial Planar |
| 2SC5369 | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION |
| 2SC536N | NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier Applications(低頻通用放大器應(yīng)用的NPN硅外延平面型晶體管) |
| 2SC563N | NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier Applications(低頻通用放大器應(yīng)用的NPN硅外延平面型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5337(NE461M02) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Discrete |
| 2SC5337-AZ | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:NPN Silicon RF Transistor for High-Frequency |
| 2SC5337QQ | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243 |
| 2SC5337QQ-T1 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243 |
| 2SC5337QR | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243 |
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