參數(shù)資料
型號: 2SC5337
廠商: NEC Corp.
英文描述: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
中文描述: npn型外延硅晶體管高頻低失真功率放大器
文件頁數(shù): 1/8頁
文件大小: 59K
代理商: 2SC5337
Silicon Transistor
2SC5337
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY LOW DISTORTION AMPLIFIER
1996
Document No. P10939EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
PRELIMINARY DATA SHEET
DESCRIPTION
The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to
UHF band, which is suitable for the CATV, tele-communication, and such.
FEATURES
Low distortion
IM
2
= 59 dB TYP. @V
CE
= 10 V, I
C
= 50 mA
IM
3
= 82 dB TYP. @V
CE
= 10 V, I
C
= 50 mA
Low noise
NF = 1.5 dB TYP. @V
CE
= 10 V, I
C
= 10 mA, f = 1 GHz
New power mini-mold package version of a 4-pin type
gain-improved on the 2SC3356
PACKAGE DIMENSIONS
(in millimeters)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
V
CBO
30
V
Collector to Emitter Voltage
V
CEO
15
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
250
mA
Total Power Dissipation
P
T
Note1
2.0
W
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
–65 to +150
°
C
Note 1
. 0.7 mm
×
16 cm
2
double sided ceramic substrate (Copper plaiting)
4.5±0.1
1.6±0.2
2
3
1.5±0.1
0.25±0.02
0.42
±0.06
0.46
±0.06
3.0
1.5
0.42
±0.06
0
C
E
B
E
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
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