- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370082 > 2SC5337 (NEC Corp.) NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SC5337 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
| 中文描述： | npn型外延硅晶體管高頻低失真功率放大器 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 2SC5337 |
2
2SC5337
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
I
CBO
V
CB
= 20 V, I
E
= 0
0.01
5.0
μ
A
Emitter Cutoff Current
I
EBO
V
EB
= 2 V, I
C
= 0
0.03
5.0
μ
A
DC Current Gain
h
FE
V
CE
= 10 V, I
C
= 50 mA
Note2
40
120
200
Insertion Power Gain
| S
21e
|
2
V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
7.0
8.3
dB
Noise Figure 1
NF
1
V
CE
= 10 V, I
C
= 50 mA, f = 500 MHz
Note3
1.5
3.5
dB
Noise Figure 2
NF
2
V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
Note3
2.0
3.5
dB
IM
2
V
CE
= 10 V, I
C
= 50 mA, R
S
= R
L
= 75
59.0
dB
P
in
= 105 dB
μ
V/75
, f
1
= 190 MHz
f
2
= 90 MHz, f = f
1
f
2
IM
3
V
CE
= 10 V, I
C
= 50 mA, R
S
= R
L
= 75
82.0
dB
P
in
= 105 dB
μ
V/75
, f
1
= 190 MHz
f
2
= 200 MHz, f = 2
×
f
1
f
2
Notes 2
. Pulse measurement: PW
≤
350
μ
S, Duty Cycle
≤
2 %
3
. R
S
= R
L
= 50
, tuned
h
FE
Classification
Rank
QQ
QR
QS
Marking
QQ
QR
QS
h
FE
40 to 80
60 to 120
100 to 200
3rd Order
Intermoduration
Distortion
2nd Order
Intermoduration
Distortion
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5338 | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
| 2SC535 | Silicon NPN Epitaxial Planar |
| 2SC5369 | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION |
| 2SC536N | NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier Applications(低頻通用放大器應(yīng)用的NPN硅外延平面型晶體管) |
| 2SC563N | NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier Applications(低頻通用放大器應(yīng)用的NPN硅外延平面型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5337(NE461M02) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5337-AZ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:NPN Silicon RF Transistor for High-Frequency |
| 2SC5337QQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243 |
| 2SC5337QQ-T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243 |
| 2SC5337QR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。