參數(shù)資料
型號(hào)： 2SC5185-T2
廠商： NEC Corp.
英文描述： NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
中文描述： npn型外延硅晶體管超微型模低噪聲微波功放包裝
文件頁(yè)數(shù)： 3/12頁(yè)
文件大小： 60K
代理商： 2SC5185-T2
3
2SC5185
CHARACTERISTICS CURVES (T
A
= 25 C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
100
0
50
100
150
90 mW
T
A
- Ambient Temperature - C
P
T
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
40
30
20
10
0
0.5
1.0
V
CE
= 2 V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
15
10
5
0
1.0
2.0
3.0
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
= 20 A
Passive Air
Cooling
I
C
V
BE
- Base to Emitter Voltage - V
V
CE
- Collector to Emitter Voltage - V
I
C
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
16
1
2
5
10
20
100
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
14
1
2
5
10
20
100
14
12
10
8
6
4
2
2 V
V
CE
= 1 V
f = 2 GHz
12
10
8
6
4
2 V
V
CE
= 1 V
f = 2 GHz
30
I
C
- Collector Current - mA
I
C
- Collector Current - mA
f
T
|
2
|
2
I
C
- Collector Current - mA
h
F
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
10
20
50
1
2
5
10
20
50
100
V
CE
= 2 V
V
CE
= 1 V
相關(guān)PDF資料
PDF描述
2SC5185-T1 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5186-T1 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5186 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5186(NE68719) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete
2SC5186T1 制造商:NEC 功能描述:New
2SC5186-T1 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5186-T1-A-FB 制造商:Renesas Electronics Corporation 功能描述:
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