參數(shù)資料
型號: 2SC5185-T1
廠商: NEC Corp.
英文描述: NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
中文描述: npn型外延硅晶體管超微型模低噪聲微波功放包裝
文件頁數(shù): 1/12頁
文件大?。?/td> 60K
代理商: 2SC5185-T1
1994
DATA SHEET
SILICON TRANSISTOR
2SC5185
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
Low Noise
NF = 1.3 dB
TYP.
@ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
NF = 1.3 dB
TYP.
@ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Super Mini-Mold package
ORDERING INFORMATION
PART
NUMBER
QUANTITY
ARRANGEMENT
2SC5185-T1
Embossed tape, 8 mm wide,
pins No. 3 (base), and No. 4
(emitter) facing the perforations
2SC5185-T2
3 000 units/reel
Embossed tape, 8 mm wide,
pins No. 1 (collector) and No. 2
(emitter) facing the perforations
* Contact your NEC sales representative to order samples for
evaluation.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
V
V
V
30
90
150
mA
mW
°
C
°
C
–65 to +150
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
2.1± 0.2
1.25 ± 0.1
2
(
0
0
(
0
0
0
0
+
0
+
0
+
0
+
0
+
1
2
4
3
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
T
Document No. P12109EJ2V0DS00 (2nd edition)
(Previous No. TC-2482)
Date Published November 1996 N
Printed in Japan
PACKAGE DIMENSIONS
(Units: mm)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5185-T2 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5186 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
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2SC5186-T1 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION