參數(shù)資料
型號: 2SC5186
廠商: NEC Corp.
英文描述: NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
中文描述: npn型外延硅晶體管超超級迷你- MOLD的低噪聲微波功放包裝
文件頁數(shù): 1/12頁
文件大?。?/td> 58K
代理商: 2SC5186
1994
DATA SHEET
SILICON TRANSISTOR
2SC5186
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
FEATURES
Low Noise
NF = 1.3 dB
TYP.
@ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
NF = 1.3 dB
TYP.
@ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Ultra Super Mini-Mold package
ORDERING INFORMATION
PART
NUMBER
QUANTITY
ARRANGEMENT
2SC5186
50 units/box
Embossed tape, 8 mm wide,
Pin 3 (Collector) facing the perforations.
2SC5186-T1
3 000 units/reel
*
Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
V
V
V
30
90
150
mA
mW
C
C
–65 to +150
Document No. P12110EJ2V0DS00 (2nd edition)
(Previous No. TC-2483)
Date Published November 1996 N
Printed in Japan
1.6 ± 0.1
0.8 ± 0.1
1
1
1
+
+
2
3
0
0
+
0
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
8
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