- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370081 > 2SC5185-T2 (NEC Corp.) NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION PDF資料下載
參數(shù)資料
| 型號： | 2SC5185-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 中文描述： | npn型外延硅晶體管超微型模低噪聲微波功放包裝 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 60K |
| 代理商： | 2SC5185-T2 |
1994
DATA SHEET
SILICON TRANSISTOR
2SC5185
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
Low Noise
NF = 1.3 dB
TYP.
@ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
NF = 1.3 dB
TYP.
@ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Super Mini-Mold package
ORDERING INFORMATION
PART
NUMBER
QUANTITY
ARRANGEMENT
2SC5185-T1
Embossed tape, 8 mm wide,
pins No. 3 (base), and No. 4
(emitter) facing the perforations
2SC5185-T2
3 000 units/reel
Embossed tape, 8 mm wide,
pins No. 1 (collector) and No. 2
(emitter) facing the perforations
* Contact your NEC sales representative to order samples for
evaluation.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
V
V
V
30
90
150
mA
mW
°
C
°
C
–65 to +150
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
2.1± 0.2
1.25 ± 0.1
2
(
0
0
(
0
0
0
0
+
–
0
+
–
0
+
–
0
+
–
0
+
–
1
2
4
3
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
T
Document No. P12109EJ2V0DS00 (2nd edition)
(Previous No. TC-2482)
Date Published November 1996 N
Printed in Japan
PACKAGE DIMENSIONS
(Units: mm)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5185-T1 | NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186 | NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186-T1 | NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5191(NE68833) | Voltage Detectors in 4-Bump (2 x 2) Chip-Scale Package |
| 2SC5191 | ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5186 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186(NE68719) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5186T1 | 制造商:NEC 功能描述:New |
| 2SC5186-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。