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參數(shù)資料
| 型號(hào)： | 2SC5184-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 中文描述： | npn型外延硅晶體管超微型模低噪聲微波功放包裝 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 58K |
| 代理商： | 2SC5184-T1 |
1994
DATA SHEET
SILICON TRANSISTOR
2SC5184
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD
PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
Low Noise
NF = 1.3 dB
TYP.
@ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
NF = 1.3 dB
TYP.
@ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Super Mini-Mold package
EIAJ: SC-70
ORDERING INFORMATION
PART
NUMBER
QUANTITY
ARRANGEMENT
2SC5184-T1
3 000 units/reel
Embossed tape, 8 mm wide,
Pin No. 3 (collector)
facing the perforations
2SC5184-T2
3 000 units/reel
Embossed tape, 8 mm wide,
Pins No. 1 (emitter) and No. 2 (base)
facing the perforations
Remark:
Contact your NEC sales representative to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
V
V
V
30
90
150
mA
mW
C
C
–65 to +150
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12108EJ2V0DS00 (2nd edition)
(Previous No. TC-2481)
Date Published November 1996 N
Printed in Japan
PACKAGE DIMENSIONS
(Units: mm)
2.1 ± 0.1
1.25 ± 0.1
2
1
3
2
0
+
–
0
0
+
–
T
Marking
0
0
0
+
–
0
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
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PDF描述 |
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| 2SC5184-T2 | NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5185 | NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5185-T2 | NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5185-T1 | NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186 | NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5184-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5185 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5185(NE68718) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5185T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-343R |
| 2SC5185-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
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