參數(shù)資料
型號(hào): 2SC5013-T2
廠商: NEC Corp.
英文描述: HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
中文描述: 高頻低噪聲放大器NPN硅外延晶體管4個(gè)引腳超小型模具
文件頁(yè)數(shù): 2/8頁(yè)
文件大小: 52K
代理商: 2SC5013-T2
2SC5013
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
I
CBO
1.0
μ
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
μ
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
50
100
250
V
CE
= 6 V, I
C
= 10 mA
*
1
Gain Bandwidth Product
f
T
10
GHz
V
CE
= 6 V, I
C
= 10 mA
Feed back Capacitance
C
re
0.25
0.8
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
*
2
Insertion Power Gain
|S
21e
|
2
7.5
9.5
dB
V
CE
= 6 V, I
C
= 10 mA,f = 2.0 GHz
Noise Figure
NF
1.8
3.0
dB
V
CE
= 6 V, I
C
= 5 mA,f = 2.0 GHz
*1
Pulse Measurement; PW
350
μ
s, Duty Cycle
2 % Pulsed.
*2
Measured with 3 terminals bridge, Emitter and Case should be grounded.
h
FE
Classification
Rank
EB
FB
GB
Marking
R46
R47
R48
h
FE
50 to 100
80 to 160
125 to 250
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