參數(shù)資料
型號(hào): 2SC5015-T1
廠商: NEC Corp.
英文描述: HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
中文描述: 高頻低噪聲放大器NPN硅外延晶體管4個(gè)引腳超小型模具
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 51K
代理商: 2SC5015-T1
1993
DATA SHEET
SILICON TRANSISTOR
2SC5015
Document No. P10394EJ2V0DS00 (2nd edition)
(Previous No. TD-7938)
Date Published August 1995 P
Printed in Japan
FEATURES
Small Package
High Gain Bandwidth Product (f
T
= 12 GHz TYP.)
Low Noise, High Gain
Low Voltage Operation
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC5015-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) faceto
perforation side of the tape.
2SC5015-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) faceto
perforation side of the tape.
*
Please contact with responsible NEC person, if you require evaluation
sample.Unit sample quantity shall be 50 pcs. (Part No.: 2SC5014)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
i
T
stg
9
6
2
V
V
V
30
150
150
mA
mW
C
C
–65 to + 150
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
Caution: Electrostatic Sensitive Device
PACKAGE DIMENSIONS
in millimeters
T
2.1 ± 0.2
1.25 ± 0.1
0.3
(LEADS 2, 3, 4)
+0.1
0
+
(
(
2
0
0
2
3
1
4
0
+
0.4
0
+0.1
0
0 to 0.1
0.15
+0.1
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
相關(guān)PDF資料
PDF描述
2SC5015 High Frequency Low Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管)
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2SC5050 Silicon NPN Epitaxial
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2SC5053 Medium Power Transistor (-50V, -1A)
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2SC5015-T1-A 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包裝:剪切帶(CT) 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿(最大值):6V 頻率 - 躍遷:12GHz 噪聲系數(shù)(dB,不同 f 時(shí)的典型值):1.5dB @ 2GHz 增益:11dB 功率 - 最大值:150mW 不同?Ic,Vce?時(shí)的 DC 電流增益(hFE)(最小值):75 @ 10mA,3V 電流 - 集電極(Ic)(最大值):30mA 安裝類型:表面貼裝 封裝/外殼:SC-82A,SOT-343 供應(yīng)商器件封裝:SOT-343 標(biāo)準(zhǔn)包裝:1
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