參數(shù)資料
型號(hào): 2SC5015-T2
廠商: NEC Corp.
英文描述: HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
中文描述: 高頻低噪聲放大器NPN硅外延晶體管4個(gè)引腳超小型模具
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 51K
代理商: 2SC5015-T2
1993
DATA SHEET
SILICON TRANSISTOR
2SC5015
Document No. P10394EJ2V0DS00 (2nd edition)
(Previous No. TD-7938)
Date Published August 1995 P
Printed in Japan
FEATURES
Small Package
High Gain Bandwidth Product (f
T
= 12 GHz TYP.)
Low Noise, High Gain
Low Voltage Operation
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC5015-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) faceto
perforation side of the tape.
2SC5015-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) faceto
perforation side of the tape.
*
Please contact with responsible NEC person, if you require evaluation
sample.Unit sample quantity shall be 50 pcs. (Part No.: 2SC5014)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
i
T
stg
9
6
2
V
V
V
30
150
150
mA
mW
C
C
–65 to + 150
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
Caution: Electrostatic Sensitive Device
PACKAGE DIMENSIONS
in millimeters
T
2.1 ± 0.2
1.25 ± 0.1
0.3
(LEADS 2, 3, 4)
+0.1
0
+
(
(
2
0
0
2
3
1
4
0
+
0.4
0
+0.1
0
0 to 0.1
0.15
+0.1
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
相關(guān)PDF資料
PDF描述
2SC5015-T1 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
2SC5015 High Frequency Low Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管)
2SC5049 Silicon NPN Epitaxial
2SC5050 Silicon NPN Epitaxial
2SC5051 Silicon NPN Epitaxial
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