參數(shù)資料
型號: 2SC5015-T2
廠商: NEC Corp.
英文描述: HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
中文描述: 高頻低噪聲放大器NPN硅外延晶體管4個引腳超小型模具
文件頁數(shù): 2/8頁
文件大小: 51K
代理商: 2SC5015-T2
2SC5015
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
I
CBO
0.1
μ
A
V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
μ
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
75
150
V
CE
= 3 V, I
C
= 10 mA
*1
Gain Bandwidth Product
f
T
12
GHz
V
CE
= 3 V, I
C
= 10 mA
Feed-back Capacitance
C
re
0.3
0.5
pF
V
CB
= 3 V, I
E
= 0, f = 1 MHz
*2
Insertion Power Gain
|S
21e
|
2
9
11
dB
V
CE
= 3 V, I
C
= 10 mA,
f = 2.0 GHz
Noise Figure
NF
1.5
2.5
dB
V
CE
= 3 V, I
C
= 3 mA,
f = 2.0 GHz
*1
Pulse Measurement; PW
350
μ
s, Duty Cycle
2 % Pulsed.
*2
Measured with 3 terminals bridge, Emitter and Case should be grounded.
h
FE
Classification
Rank
KB
Marking
T83
h
FE
75 to 150
相關PDF資料
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2SC5015-T1 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
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