參數(shù)資料
型號: 2SC3810
廠商: NEC Corp.
英文描述: NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE
中文描述: NPN硅外延晶體管微波放大器和超高速SWITCHINGS工業(yè)用
文件頁數(shù): 2/4頁
文件大?。?/td> 34K
代理商: 2SC3810
2
2SC3810
REGARDING CLEANSING
Cleanse the flux after soldering. Particularly, cleanse the bottom surface of the transistor so that flux does not remain.
If any flux remains on the bottom surface, it may absorb moisture, resulting in short circuit among pins due to metal-migration
at the metalized area of the transistor. You can use
alcohol
as a solvent.
Do not apply ultra-sonic-cleaning on this product.
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
f = 1.0 MHz
V
CE
= 8 V
V
CE
= 8 V
3
2
1
0.7
0.5
0.3
0.2
1
2
3
5
7
10
20
30
2
3
5
7
10
20
30
0.5
1
5
10
50
200
100
50
20
10
0.1
C
r
30
20
10
7
5
3
2
1
f
T
V
CB
- Collector to Base Voltage - V
I
C
- Collector Current - mA
h
F
I
C
- Collector Current - mA
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PDF描述
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