參數(shù)資料
型號： 2SC3831
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴散平面晶體管（高壓和高速開關晶體管）)
中文描述： 10 A, 500 V, NPN, Si, POWER TRANSISTOR
封裝： TO-3P, 3 PIN
文件頁數(shù)： 1/1頁
文件大?。?/td> 25K
代理商： 2SC3831
71
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switching Transistor)
2S C3831
Application :
Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3831
600
500
10
10(
Pulse
20)
4
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC3831
1
max
100
max
500
min
10to30
0.5
max
1.3
max
8
typ
105
typ
Unit
mA
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=600V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=1A
I
C
=5A, I
B
=1A
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
t
on
t
stg
t
f
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat),V
BE
(sat)–I
C
Temperature Characteristics
(Typical)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area
(Single Pulse)
0
0
2
4
6
8
10
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
800mA
1A
600mA
400mA
200mA
I
B
=12A
100mA
0.02
0.1
0.05
1
5
10
0.5
1
(I
C
/I
B
=5)
Collector Current I
C
(A)
V
BE
(sat)
125C (Case Temp)
25C (Case Temp)
–55C (Case Temp)
25C
–55C
V
CE
(sat)
1
2
5
C
C
a
s
e
e
m
p
)
0.2
1
0.5
10
5
0.1
0.5
5
10
1
S
t
o
t
s
t
f
(
μ
s
Collector Current I
C
(A)
t
stg
t
on
t
f
V
CC
200V
I
C
:I
B1
:I
B2
=10:1:–2
0.1
1
2
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
100
50
3.5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
100
500 600
50
1
0.5
1
0.05
0.01
10
30
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
10
50
8
100
500 600
0.05
0.02
1
0.5
0.1
10
30
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
DC
100
μ
s
1m
1ms
C
C
(
B
B
(
0
10
4
2
8
6
0
1.2
0.4
0.6
0.8
1.0
0.2
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
15CCsTm
–CaTp
0.02
0.1
0.05
1
10
5
0.5
5
10
50
Collector Current I
C
(A)
D
F
(V
CE
=4V)
125C
25C
–55C
2Ca m
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–0.5A
Duty:less than 1%
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
40
5
R
L
(
)
I
C
(A)
V
(V)
–5
I
B2
(A)
–1.0
t
on
(
μ
s)
1
max
t
stg
(
μ
s)
4.5
max
t
f
(
μ
s)
0.5
max
I
(A)
0.5
V
(V)
10
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
相關PDF資料
PDF描述
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