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參數(shù)資料
| 型號： | 2SC3832 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓和高速開關(guān)晶體管）) |
| 中文描述： | 7 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | MT-25, TO-220, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 24K |
| 代理商： | 2SC3832 |
72
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switching Transistor)
2S C3832
Application :
Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3832
500
400
10
7(
Pulse
14)
2
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC3832
100
max
100
max
400
min
10to30
0.5
max
1.3
max
10
typ
50
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.6A
I
C
=3A, I
B
=0.6A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
t
on
t
stg
t
f
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat),V
BE
(sat)–I
C
Temperature Characteristics
(Typical)
C
C
(
B
B
(
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area
(Single Pulse)
0
0
4
2
6
7
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
400mA
300mA
600mA
80A
200mA
I
B
=100mA
0.02
0.1
0.05
1
5
0.5
7
0
1
(I
C
/I
B
=5)
Collector Current I
C
(A)
V
BE
(sat)
125C (Case Temp)
25C (Case Temp)
–55C (Case Temp)
25C
–55C
V
CE
(sat)
1
2
5
C
C
a
s
e
e
m
p
)
0.2
1
0.5
5
0.1
0.5
5
10
1
S
t
o
t
s
t
f
(
μ
s
Collector Current I
C
(A)
t
stg
t
on
t
f
V
CC
200V
I
C
:I
B1
:–I
B2
=10:1:2
0.3
1
4
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
50
40
30
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
10
50
5
500
100
1
0.5
0.1
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
L=3mH
–I
B2
=1A
Duty:less than 1%
10
50
5
100
500
1
0.5
0.1
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
100
μ
s
0
7
2
4
6
0
1.2
0.4
0.6
0.8
1.0
0.2
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
15CCsTm
2CCeep
–Cem
0.02
0.1
0.05
1
7
5
0.5
5
10
50
Collector Current I
C
(A)
D
F
(V
CE
=4V)
125C
25C
–30C
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
66.7
3
R
L
(
)
I
C
(A)
V
(V)
–5
I
B2
(A)
–0.6
t
on
(
μ
s)
1
max
t
stg
(
μ
s)
3
max
t
f
(
μ
s)
0.5
max
I
(A)
0.3
V
(V)
10
External Dimensions
MT-25(TO220)
B
E
2.5
2.5
C
1
±
1
4
8
±
1.35
0.65
+0.2
-0.1
10.2
±0.2
3.75
±0.2
3
±
4.8
±0.2
1.4
2.0
±0.1
a
b
Weight : Approx 2.6g
a. Type No.
b. Lot No.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3833 | 制造商:n/a 功能描述:2SC3833 |
| 2SC3835 | 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:Box 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN 120V 7A TO3P |
| 2SC3837KT146 | 制造商:ROHM Semiconductor 功能描述: |
| 2SC3837KT146N | 功能描述:兩極晶體管 - BJT NPN 20V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC3837KT146N/P | 制造商:ROHM Semiconductor 功能描述:Transistor, NPN, RF, 18V, 50mA, SMT3, 2 |
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