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參數資料
| 型號： | 2SC3810 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
| 中文描述： | NPN硅外延晶體管微波放大器和超高速SWITCHINGS工業(yè)用 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SC3810 |
Document No. P11698EJ1V0DS00 (1st edition)
Date Published July 1996 P
Printed in Japan
SILICON TRANSISTOR
2SC3810
FEATURES
The 2SC3810 is an NPN silicon epitaxial dual transistor having
a large-gain-bandwidth product performance in a wide operating
current range.
Dual chips in one package can achieve high performance for
differential amplifiers and current mode logic (CML) circuits.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
NPN SILICON EPITAXIAL TRANSISTOR
FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS
INDUSTRIAL USE
PACKAGE DIMENSIONS (in millimeters)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
10
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
65/unit
mA
Total Power Dissipation
P
T
240/unit
mW
Thermal Resistance (junction to case)
R
th (j-c)
90/unit
°
C/W
Junction Temperature
T
j
200
°
C
Storage Temperature
T
stg
-
65 to +200
°
C
5.0 MIN.
3
4
2
1
5
3
5
E
4
B
1
1
B
2
C
1
C
2
2
(#492C)
5.0 MIN.
0.6
±
0.1
0
±
1
±
2
5
3.5
+0.3
-
0.2
0
+
-
0
PIN CONNECTIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector to Base Breakdown Voltage
BV
CBO
I
C
= 10
μ
A
20
V
Emitter to Base Breakdown Voltage
BV
EBO
I
E
= 10
μ
A, I
C
= 0
1.5
V
Collector to Emitter Breakdown Voltage
BV
CEO
I
C
= 1 mA, R
BE
=
∞
10
V
Collector Cut-off Current
I
CBO
V
CB
= 10 V, I
E
= 0
1.0
μ
A
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0
1.0
μ
A
DC Current Gain
h
FE
V
CE
= 8 V, I
C
= 20 mA
50
100
250
h
FE
Ratio
h
FE1
/h
FE2
Note 1
V
CE
= 8 V, I
C
= 20 mA
0.6
1.0
Difference of Base to Emitter Voltage
V
BE
V
CE
= 8 V, I
C
= 20 mA
30
mV
Gain Bandwidth Product
f
T
Note 2
V
CE
= 8 V, I
C
= 20 mA
7
8
GHz
Feedback Capacitance
C
re
Note 3
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
0.5
1.0
pF
Notes 1.
h
FE1
is the smaller h
FE
value of the 2 transistors.
2.
Measured using a single-type device (equivalent to the 2SC3604).
3.
Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should be connected to
the guard terminal of the bridge.
1996
DATA SHEET
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