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參數(shù)資料
| 型號(hào)： | 2SB648 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial(外延PNP晶體管) |
| 中文描述： | 硅外延進(jìn)步黨（外延進(jìn)步黨晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 35K |
| 代理商： | 2SB648 |
2SB648, 2SB648A
2
Electrical Characteristics
(Ta = 25
°
C)
2SB648
2SB648A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
I
C
= –10
μ
A, I
E
= 0
Collector to base
breakdown voltage
V
(BR)CBO
–180 —
—
–180 —
—
V
Collector to emitter
breakdown voltage
V
(BR)CEO
–120 —
—
–160 —
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
—
–5
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
h
FE1
*
—
—
–10
—
—
–10
μ
A
V
CB
= –160 V, I
E
= 0
V
= –5 V,
I
C
= –10 mA
V
CE
= –5 V, I
C
= –1 mA
I
C
= –30 mA,
I
B
= –3 mA
V
= –5 V,
I
C
= –10 mA
V
= –10 V,
I
C
= –10 mA
V
= –10 V, I
E
= 0,
f = 1 MHz
DC current transfer
ratio
1
60
—
320
60
—
200
h
FE2
V
CE(sat)
30
—
—
30
—
—
Collector to emitter
saturation voltage
—
—
–2
—
—
–2
V
Base to emitter voltage V
BE
—
—
–1.5
—
—
–1.5
V
Gain bandwidth product f
T
—
140
—
—
140
—
MHz
Collector output
capacitance
Note:
1. The 2SB648 and 2SB648A are grouped by h
FE1
as follows.
Cob
—
4.5
—
—
4.5
—
pF
B
C
D
2SB648
60 to 120
100 to 200
160 to 320
2SB648A
60 to 120
100 to 200
—
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB648A | Silicon PNP Epitaxial(外延PNP晶體管) |
| 2SB649 | Silicon PNP Epitaxial |
| 2SB649 | TO-126C Plastic-Encapsulated Transistors |
| 2SB649A | TO-126C Plastic-Encapsulated Transistors |
| 2SB649A | Silicon PNP Epitaxial |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB648A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SB648AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 50MA I(C) | TO-126VAR |
| 2SB648AC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 50MA I(C) | TO-126VAR |
| 2SB648AD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB648B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-126VAR |
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