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參數(shù)資料
| 型號： | 2SB566AK |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused |
| 中文描述： | 三重擴散硅進步黨 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2SB566AK |
2SB566(K), 2SB566A(K)
3
60
40
20
0
50
100
150
C
C
Case temperature T
C
(
°
C)
Maximum Collector Dissipation Curve
–10
–1
C
C
–5
–2
–1.0
–0.5
–0.2
–0.1
–2
–10
–5
–20
–50 –100
(–60 V, –0.15 A)
2SB566A K
I
C
max (Continuous)
DCOpeaion
T
C
= 25
°
C
(–50 V, –0.22 A)
2SB566 K
Area Safe Operation
Collector to emitter voltage V
CE
(V)
0
C
C
–5
–4
–3
–2
–1
T
C
= 25
°
C
–2
–4
–6
–8
–10
I
B
= 0
–10 mA
–20
–30
–40
–50
–60
–70
Typical Output Characteristics
Collector to emitter voltage V
CE
(V)
0
C
C
–5
V
CE
= –4 V
–2
–1.0
–0.2
–0.1
–0.05
–0.02
–0.01
–0.5
–0.4
–0.8
–1.2 –1.4
–1.0
–0.6
–0.2
T
C
°
C
2
–
Typical Transfer Characteristics
Base to emitter voltage V
BE
(V)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB566K | Silicon PNP Triple Diffused |
| 2SB566 | Power Bipolar Transistors |
| 2SB566A | Power Bipolar Transistors |
| 2SB632 | PNP Epitaxial Planar Silicon Transistor for 25V/35V, 2A Low-Frequency Power Amplifier Applications(用于25V/35V，2A低頻功率放大器應(yīng)用的PNP硅外延平面型晶體管) |
| 2SB646 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB566B(K) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB566C(K) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB566K | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Triple Diffused |
| 2SB568 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-220AB -200V -2A 30W BCE |
| 2SB591 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:SILICON TRANSISTORS |
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