- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370061 > 2SB632 (Sanyo Electric Co.,Ltd.) PNP Epitaxial Planar Silicon Transistor for 25V/35V, 2A Low-Frequency Power Amplifier Applications(用于25V/35V，2A低頻功率放大器應(yīng)用的PNP硅外延平面型晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SB632 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | PNP Epitaxial Planar Silicon Transistor for 25V/35V, 2A Low-Frequency Power Amplifier Applications(用于25V/35V，2A低頻功率放大器應(yīng)用的PNP硅外延平面型晶體管) |
| 中文描述： | 進(jìn)步黨硅外延平面晶體管的25V/35V，甲低頻功率放大器應(yīng)用（用于25V/35V，甲低頻功率放大器應(yīng)用的新進(jìn)步黨硅外延平面型晶體管） |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 303K |
| 代理商： | 2SB632 |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/90595MO (KOTO)/4017KI/D174MW, TS/E108, 8-2176 No.341–1/9
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistor
2SB632, 632K/2SD612, 612K
25V/35V, 2A Low-Frequency
Power Amplifier Applications
Ordering number:341G
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
2
1
6
D
,
3
6
B
S
2
K
2
1
6
D
,
K
2
3
6
B
S
2
t
U
e
g
a
V
V
a
V
t
e
C
t
e
C
o
p
s
D
e
s
r
m
e
s
a
B
E
a
-
e
C
-
e
C
-
m
E
r
e
C
r
e
C
r
e
C
V
V
V
O
O
O
B
E
B
C
C
E
IC
IP
C
PC
5
5
2
2
5
5
3
3
5
2
3
V
V
V
A
A
W
W
C
e
g
a
e
g
B
)
s
P
n
(
1
0
0
0
1
5
5
e
p
e
p
m
m
e
e
T
T
n
e
o
n
a
S
u
J
j
g
T
1
1
g
+
o
5
5
–
( ) : 2SB632, 632K
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2009B
[2SB632, 632K/2SD612, 612K]
Features
· High collector dissipation and wide ASO.
C
Electrical Characteristics
at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
JEDEC : TO-126
Tc=25C
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
m
2
3
2
3
5
p
x
a
m
e
g
a
V
n
w
o
d
k
a
e
B
e
s
a
B
-
e
C
V
O
B
C
)
R
B
(
IC
I
A
μ
0
1
=
E0
=
2
1
2
1
1
6
1
6
6
D
6
D
D
,
D
,
,
3
2
3
6
,
3
6
B
3
6
B
6
B
B
5
5
5
5
V
V
V
V
V
A
μ
A
μ
K
2
K
e
g
a
V
n
w
o
d
k
a
B
r
m
E
-
e
C
V
O
E
C
)
R
B
(
IC
R
,
A
m
1
=
E
B=
∞
K
2
K
2
e
g
a
V
n
w
o
d
k
t
a
e
B
e
C
e
C
e
s
a
B
f
C
f
C
-
m
r
e
C
r
m
E
E
V
O
B
E
O
O
)
R
C
I
E
B
I
(
IE
VB
C
VB
E
I
A
V
0
I
V
μ
0
1
=
=
=
C0
=
I
E0
C0
=
B
B
2
4
=
1
1
t
* : The 2SB632/2SD612 are classified by 500mA h
FE
as follows :
0
2
1
D
0
6
0
0
2
E
0
0
1
0
2
3
F
0
6
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB646 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A |
| 2SB646A | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A |
| 2SB648 | Silicon PNP Epitaxial(外延PNP晶體管) |
| 2SB648A | Silicon PNP Epitaxial(外延PNP晶體管) |
| 2SB649 | Silicon PNP Epitaxial |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB632D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | TO-126 |
| 2SB632E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | TO-126 |
| 2SB632F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | TO-126 |
| 2SB632K | 制造商:JMNIC 制造商全稱:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon PNP Power Transistors |
| 2SB632KD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 2A I(C) | TO-126 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。