參數(shù)資料
型號: 2SB566K
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Triple Diffused
中文描述: 三重擴(kuò)散硅進(jìn)步黨
文件頁數(shù): 1/6頁
文件大小: 33K
代理商: 2SB566K
2SB566(K), 2SB566A(K)
Silicon PNP Triple Diffused
Application
Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K)
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
123
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Symbol
2SB566(K)
2SB566A(K)
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
1
Tj
–70
–70
V
Collector to emitter voltage
–50
–60
V
Emitter to base voltage
–5
–5
V
Collector current
–4
–4
A
Collector peak current
–8
–8
A
Collector power dissipation
40
40
W
Junction temperature
150
150
°
C
°
C
Storage temperature
Note:
1. Value at T
C
= 25
°
C.
Tstg
–55 to +150
–55 to +150
相關(guān)PDF資料
PDF描述
2SB566 Power Bipolar Transistors
2SB566A Power Bipolar Transistors
2SB632 PNP Epitaxial Planar Silicon Transistor for 25V/35V, 2A Low-Frequency Power Amplifier Applications(用于25V/35V,2A低頻功率放大器應(yīng)用的PNP硅外延平面型晶體管)
2SB646 LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A
2SB646A LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A
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