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參數(shù)資料
| 型號： | 2SB566AK |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused |
| 中文描述： | 三重擴散硅進步黨 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2SB566AK |
2SB566(K), 2SB566A(K)
2
Electrical Characteristics
(Ta = 25°C)
2SB566(K)
2SB566A(K)
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–70
—
—
–70
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–50
—
—
–60
—
—
V
I
C
= –50 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
—
–5
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
—
—
–1
—
—
–1
μ
A
V
CB
= –50 V, I
E
= 0
V
CE
= –4 V, I
C
= –1 A
V
CE
= –4 V, I
C
= –0.1 A
I
C
= –2 A, I
B
= –0.2 A
DC current tarnsfer ratio h
FE1
*
1
60
—
200
60
—
200
h
FE2
V
CE(sat)
35
—
—
35
—
—
Collector to emitter
saturation voltage
—
—
–1.0
—
—
–1.0
V
Base to emitter
saturation voltage
V
BE(sat)
—
—
–1.2
—
—
–1.2
V
I
C
= –2 A, I
B
= –0.2 A
Gain bandwidth product f
T
Turn on time
—
15
—
—
15
—
MHz
V
CE
= –4 V, I
C
= –0.5 A
V
CC
= –10.5 V
I
C
= 10I
B1
= –10I
B2
=
–0.5 A
t
on
t
off
t
stg
—
0.3
—
—
0.3
—
μ
s
μ
s
μ
s
Turn off time
—
3.0
—
—
3.0
—
Storage time
Note:
—
2.5
—
—
2.5
—
1. The 2SB566(K) and 2SB566A(K) are grouped by h
FE1
as follows.
B
C
60 to 120
100 to 200
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PDF描述 |
|---|---|
| 2SB566K | Silicon PNP Triple Diffused |
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| 2SB566A | Power Bipolar Transistors |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB566B(K) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB566C(K) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB566K | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Triple Diffused |
| 2SB568 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-220AB -200V -2A 30W BCE |
| 2SB591 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:SILICON TRANSISTORS |
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