參數(shù)資料
型號(hào): 2SA1615
廠商: NEC Corp.
英文描述: PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
中文描述: 進(jìn)步黨硅外延的高晶體管高速開關(guān)
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 118K
代理商: 2SA1615
Data Sheet D16119EJ1V0DS
2
2SA1615, 1615-Z
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
20 V, I
E
= 0
1.0
μ
A
Emitter cutoff current
I
EBO
V
EB
=
8.0 V, I
C
= 0
1.0
μ
A
DC current gain
h
FE1
*
V
CE
=
2.0 V, I
C
=
0.5 A
200
600
DC current gain
h
FE2
*
V
CE
=
2.0 V, I
C
=
4.0 A
160
Collector saturation voltage
V
CE(sat)
*
I
C
=
4.0 A, I
B
=
0.05 A
0.2
0.25
V
Base saturation voltage
V
BE(sat)
*
I
C
=
4.0 A, I
B
=
0.05 A
0.9
1.2
V
Gain bandwidth product
f
T
V
CE
=
5.0 V, I
E
= 1.5 A
180
MHz
Output capacity
C
ob
V
CB
=
10 V, I
E
= 0, f = 1.0 MHz
220
pF
Turn-on time
t
on
80
ns
Storage time
t
stg
300
ns
Fall time
t
f
I
C
=
5.0 A, I
B1
=
I
B2
= 0.125 A,
R
L
= 2.0
, V
CC
10 V
60
ns
* Pulse test PW
350
μ
s, duty cycle
2%
h
FE
CLASSIFICATION
Marking
L
K
h
FE2
200 to 400
300 to 600
PACKAGE DRAWING (UNIT: mm)
2SA1615
2SA1615-Z
Electrode Connection
1. Base
2. Collector
3. Emitter
4. Collector (fin)
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