參數(shù)資料
型號: 2SA1645K
廠商: NEC Corp.
英文描述: TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 7A I(C) | TO-220AB
中文描述: 晶體管|晶體管|進步黨| 100V的五(巴西)總裁| 7A條一(c)| TO - 220AB現(xiàn)有
文件頁數(shù): 1/6頁
文件大小: 143K
代理商: 2SA1645K
Document No. D15587EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1645, 2SA1645-Z
PNP SILICON EPITAXIAL
TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1645 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage. This transistor is ideal for use in switching
power supplies, DC/DC converters, motor drivers, solenoid drivers,
and other low-voltage power supply devices, as well as for high-
current switching.
FEATURES
Fast switching speed
Low collector-to-emitter saturation voltage:
V
CE(sat)
=
0.3 V MAX. @I
C
=
4 A
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
150
V
Collector to emitter
voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
V
Collector current
I
D(DC)
7.0
A
Collector current
I
C(pulse)
PW
300
μ
s,
Duty Cycle
10%
14
A
Base current
I
B(DC)
3.5
A
Total power dissipation
P
T
Tc = 25
°
C
35
W
Total power dissipation
P
T
Ta = 25
°
C
1.5
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to
+150
°
C
PACKAGE DRAWING (UNIT: mm)
相關PDF資料
PDF描述
2SA1645L 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
2SA1645M TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 7A I(C) | TO-220AB
2SA1645-ZK 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
2SA1645-ZL TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 7A I(C) | TO-263AB
2SA1645-ZM 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
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