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參數(shù)資料
| 型號： | 2SA1615 |
| 廠商： | NEC Corp. |
| 英文描述： | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 中文描述： | 進(jìn)步黨硅外延的高晶體管高速開關(guān) |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 118K |
| 代理商： | 2SA1615 |
Document No. D16119EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTORS
2SA1615, 1615-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation
and are ideal for high-efficiency DC/DC converters due to the fast switching speed.
FEATURES
Large current capacity:
I
C(DC)
:
10 A, I
C(pulse)
:
15 A
High h
FE
and low collector saturation voltage:
h
FE
= 200 MIN. (@V
CE
=
2.0 V, I
C
=
0.5 A)
V
CE(sat)
≤
0.25 V (@I
C
=
4.0 A, I
B
=
0.05 A)
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
20
V
Emitter to base voltage
V
EBO
10
V
Collector current (DC)
I
C(DC)
10
A
Collector current (pulse)
I
C(pulse)
*
15
A
Base current (DC)
I
B(DC)
0.5
A
Total power dissipation
P
T
(T
a
= 25
°
C)**
1.0
W
Total power dissipation
P
T
(T
c
= 25
°
C)
15
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
≤
10 ms, duty cycle
≤
50%
**Printing board mounted
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1615-Z | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 2SA1617 | Silicon PNP Epitaxial |
| 2SA1624 | PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
| 2SA1641 | PNP Epitaxial Planar Silicon Transistors for High-Current Switching Applications(用于大電流轉(zhuǎn)換應(yīng)用的PNP硅外延平面型晶體管) |
| 2SA1645K | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 7A I(C) | TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1615-AZ | 制造商:Renesas Electronics 功能描述:Trans GP BJT PNP 20V 10A 3-Pin(3+Tab) TO-251 Cut Tape 制造商:Renesas 功能描述:Trans GP BJT PNP 20V 10A 3-Pin(3+Tab) TO-251 |
| 2SA1615-AZ(K) | 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SA1615-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1615-K-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1615-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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