參數(shù)資料
型號(hào): 2SA1191
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Epitaxial
中文描述: 硅外延進(jìn)步黨
文件頁數(shù): 5/10頁
文件大?。?/td> 45K
代理商: 2SA1191
2SA1190, 2SA1191
5
Collector Cutoff Current vs.
Collector to Base Voltage
Collector to Base Voltage V
CB
(V)
0
–20
–40
–60
–80
–100
C
C
–1
–10
–100
–1,000
–10.000
Ta = 75
°
C
I
E
= 0
25
–25
Collector Cutoff Current vs.
Collector to Emitter Voltage
Collector to Emitter Voltage V
CE
(V)
0
–20
–40
–60
–80
–100
C
C
–0.1
–1.0
–10
–100
–1,000
Ta = 75
°
C
25
–25
R
BE
=
Emitter Cutoff Current vs.
Emitter to Base Voltage
Emitter to Base Voltage V
EB
(V)
0
–2
–4
–6
–8
–10
E
E
–0.1
–1.0
–10
–100
–1,000
Ta = 75
°
C
25
–25
I
C
= 0
Collector to Emitter Breakdown Voltage vs.
Base to Emitter Resistance
–190
Base to Emitter Resistance R
BE
(
)
10
100
1 k
10 k
100 k
C
V
(
C
–140
–150
–160
–170
–180
Typical Value
I
C
= –1 mA
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