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參數(shù)資料
| 型號： | 2SA1194K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進(jìn)步黨 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SA1194K |
2SA1194(K)
Silicon PNP Epitaxial
Application
High gain amplifier
Outline
TO-126 MOD
1. Emitter
2. Collector
3. Base
123
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
1
Tj
–60
V
Collector to emitter voltage
–60
V
Emitter to base voltage
–7
V
Collector current
–1
A
Collector peak current
–2
A
Collector power dissipation
1
W
8
W
Junction temperature
150
°
C
°
C
Storage temperature
Note:
1. Value at T
C
= 25
°
C
Tstg
–55 to +150
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