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參數(shù)資料
| 型號： | 2SA1194 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進(jìn)步黨 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SA1194 |
2SA1194(K)
Silicon PNP Epitaxial
Application
High gain amplifier
Outline
TO-126 MOD
1. Emitter
2. Collector
3. Base
123
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
1
Tj
–60
V
Collector to emitter voltage
–60
V
Emitter to base voltage
–7
V
Collector current
–1
A
Collector peak current
–2
A
Collector power dissipation
1
W
8
W
Junction temperature
150
°
C
°
C
Storage temperature
Note:
1. Value at T
C
= 25
°
C
Tstg
–55 to +150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1194K | Silicon PNP Epitaxial |
| 2SA1205 | SILICON PNP EPITAXIAL PLANAR |
| 2SA1206 | PNP SILICON TEANSISTOR |
| 2SA1221 | PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
| 2SA1222 | PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1194(K) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 1A I(C) | TO-126 |
| 2SA1194K | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-126 -60V -1A 1W ECB |
| 2SA1195 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| 2SA1197 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR-60V -1A 8W SURFACE MOUNT |
| 2SA1198 | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANSISTOR TO-92 -80V -.05A .4W ECB |
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