參數(shù)資料
型號(hào): 2SA1191
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Epitaxial
中文描述: 硅外延進(jìn)步黨
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 45K
代理商: 2SA1191
2SA1190, 2SA1191
3
Electrical Characteristics
(Ta = 25°C)
2SA1190
2SA1191
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–90
–120
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–90
–120
V
I
C
= –1 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
–5
–5
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
–0.1
–0.1
μ
A
μ
A
V
CB
= –70 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V,
I
C
= –2 mA*
2
I
C
= –10 mA,
I
B
= –1 mA*
2
Emitter cutoff current
–0.1
–0.1
DC current trnsfer ratio
250
800
250
800
Collector to emitter
saturation voltage
V
CE(sat)
–0.05 –0.15 —
–0.05 –0.15 V
Base to emitter
saturation voltage
V
BE(sat)
–0.7
–1.0
–0.7
–1.0
V
Gain bandwidth product f
T
130
130
MHz
V
CE
= –6 V,
I
C
= –10 mA
V
= –10 V, I
E
= 0,
f = 1 MHz
Collector output
capacitance
Cob
3.2
3.2
pF
Noise figure
NF
0.15
1.5
0.15
1.5
dB
V
CE
= –6 V,
I
C
= –0.1 mA,
R
= 10 k
f = 1 kHz
0.2
2.0
0.2
2.0
dB
V
CE
= –6 V,
I
C
= –0.1 mA,
R
= 10 k
f = 10 Hz
Noise voltage reffered
to input
e
n
0.7
0.7
nV/
Hz
V
CB
= –6 V,
I
= –10 mA,
Rg = 0, f = 1 kHz
Notes: 1. The 2SA1190 and 2SA1191 are grouped by h
FE
as follows.
2. Pulse test
D
E
250 to 500
400 to 800
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