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參數(shù)資料
| 型號： | 2N6387G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS |
| 中文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 2N6387G |
2N6387, 2N6388
http://onsemi.com
4
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 100
°
C
SECOND BREAKDOWN LIMITED
20
1.0
Figure 5. Active-Region Safe Operating Area
2.0
0.03
10
20
80
T
J
= 150
°
C
0.2
5.0
0.5
I
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
10
40
1.0
0.1
dc
2.0
60
4.0
6.0
50 s
1 ms
10 s
CURVES APPLY BELOW RATED V
CEO
5 ms
50 ms
2N6387
2N6388
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
< 150 C. T
J(pk)
may be calculated from the data in Figure
4. At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
10,000
1.0
Figure 6. SmallSignal Current Gain
f, FREQUENCY (kHz)
10
2.0
5.0
10
20
50
100
200
1000
500
300
200
100
5000
3000
2000
h
20
500
1000
30
50
T
C
= 25
°
C
V
CE
= 4.0 Vdc
I
C
= 3.0 Adc
300
0.1
Figure 7. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
30
1.0
2.0
5.0
20
100
10
C
200
100
70
50
C
ib
C
ob
50
0.2
0.5
T
J
= 25
°
C
V
0.1
Figure 8. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
0.2
0.3
0.5 0.7
1.0
2.0
10
500
300
200
h
T
J
= 150
°
C
25
°
C
55
°
C
V
CE
= 4.0 V
7.0
20,000
5000
10,000
3000
2000
1000
3.0
5.0
Figure 9. Collector Saturation Region
3.0
I
B
, BASE CURRENT (mA)
0.3
0.5
1.0
2.0 3.0
5.0
7.0
30
2.6
2.2
1.8
1.4
I
C
= 2.0 A
T
J
= 25
°
C
4.0 A
6.0 A
1.0
0.7
20
10
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PDF描述 |
|---|---|
| 2N6388G | Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS |
| 2N6388 | Plastic Medium Power Silicon Transistors(10A，65W，80V（集電極-發(fā)射極），塑料，硅NPN中等功率晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6388 | 功能描述:達林頓晶體管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6388 | 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220 |
| 2N6388_00 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SILICON NPN POWER DARLINGTON TRANSISTOR |
| 2N6388D4(8110) | 制造商:STMicroelectronics 功能描述:Low-Frequency Power Silicon NPN BJT 制造商:STMicroelectronics 功能描述:2N6388D4(8110) - Bulk |
| 2N6388G | 功能描述:達林頓晶體管 10A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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