參數資料
型號： 2N6387G
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS
中文描述： 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN
文件頁數： 1/6頁
文件大小： 87K
代理商： 2N6387G
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 12
1
Publication Order Number:
2N6387/D
2N6387, 2N6388
2N6388 is a Preferred Device
Plastic MediumPower
Silicon Transistors
These devices are designed for generalpurpose amplifier and
lowspeed switching applications.
Features
High DC Current Gain h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
CollectorEmitter Sustaining Voltage @ 100 mAdc
V
CEO(sus)
= 60 Vdc (Min) 2N6387
= 80 Vdc (Min) 2N6388
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 5.0 Adc 2N6387, 2N6388
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
TO220AB Compact Package
PbFree Packages are Available*
MAXIMUM RATINGS
(Note 1)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
2N6387
2N6388
V
CEO
60
80
Vdc
CollectorBase Voltage
2N6387
2N6388
V
CB
60
80
Vdc
EmitterBase Voltage
V
EB
5.0
Vdc
Collector Current Continuous
Peak
I
C
10
15
Adc
Base Current
I
B
250
mAdc
Total Power Dissipation @ T
C
= 25 C
Derate above 25 C
P
D
65
0.52
W
W/
°
C
Total Power Dissipation @ T
A
= 25 C
Derate above 25 C
P
D
2.0
0.016
W
W/
°
C
Operating and Storage Junction,
Temperature Range
T
J
, T
stg
65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
R
JC
1.92
C/W
Thermal Resistance, JunctiontoAmbient
R
JA
62.5
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
DARLINGTON NPN SILICON
POWER TRANSISTORS
8 AND 10 AMPERES
65 WATTS, 60 80 VOLTS
TO220AB
CASE 221A
STYLE 1
123
4
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
2N638x = Device Code
x = 7 or 8
G
= PbFree Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MARKING
DIAGRAM
2N638xG
AYWW
2N6388
2N6388G
TO220AB
TO220AB
(PbFree)
50 Units / Rail
50 Units / Rail
Device
Package
Shipping
2N6387
2N6387G
TO220AB
TO220AB
(PbFree)
50 Units / Rail
50 Units / Rail
ORDERING INFORMATION
相關PDF資料
PDF描述
2N6388G Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS
2N6388 Plastic Medium Power Silicon Transistors(10A，65W，80V（集電極-發(fā)射極），塑料，硅NPN中等功率晶體管)
2N6394G Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS
2N6395G Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS
2N6397G Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS
相關代理商/技術參數
參數描述
2N6388 功能描述:達林頓晶體管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
2N6388 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220
2N6388_00 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SILICON NPN POWER DARLINGTON TRANSISTOR
2N6388D4(8110) 制造商:STMicroelectronics 功能描述:Low-Frequency Power Silicon NPN BJT 制造商:STMicroelectronics 功能描述:2N6388D4(8110) - Bulk
2N6388G 功能描述:達林頓晶體管 10A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
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