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參數(shù)資料
| 型號(hào)： | 2N6394G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS |
| 中文描述： | 12 A, 50 V, SCR, TO-220AB |
| 封裝： | LEAD FREE, CASE 221A-07, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 2N6394G |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 6
1
Publication Order Number:
2N6394/D
2N6394 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies.
Features
Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 V
PbFree Packages are Available*
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(T
= 40 to 125
°
C, Sine Wave,
50 to 60 Hz, Gate Open)
2N6394
2N6395
2N6397
2N6399
V
DRM,
V
RRM
50
100
400
800
V
On-State RMS Current
(180
°
Conduction Angles; T
C
= 90
°
C)
I
T(RMS)
12
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
J
= 90
°
C)
I
TSM
100
A
Circuit Fusing (t = 8.3 ms)
I
2
t
40
A
2
s
Forward Peak Gate Power
(Pulse Width
≤
1.0 s, T
C
= 90
°
C)
P
GM
20
W
Forward Average Gate Power
(t = 8.3 ms, T
C
= 90
°
C)
P
G(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width
≤
1.0 s, T
C
= 90
°
C)
I
GM
2.0
A
Operating Junction Temperature Range
T
J
40 to +125
°
C
Storage Temperature Range
T
stg
40 to +150
°
C
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
R
JC
2.0
°
C/W
Maximum Lead Temperature for Soldering
Purposes 1/8
″
from Case for 10 Seconds
T
L
260
°
C
Indicates JEDEC Registered Data
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
K
G
A
Preferred
devices are recommended choices for future use
and best overall value.
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
TO220AB
CASE 221A
STYLE 3
123
4
2N639x = Device Code
x = 4, 5, 7, or 9
G
= PbFree Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MARKING
DIAGRAM
2N639xG
AYWW
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6395G | Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS |
| 2N6397G | Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS |
| 2N6399G | Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS |
| 2N6394 | 12 Ampere RMS Reverse Blocking Thyristor(12A（均方根值），50V硅控整流器反向截止晶閘管) |
| 2N6395 | 12 Ampere RMS Reverse Blocking Thyristor(12A（均方根值），100V硅控整流器反向截止晶閘管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6394TG | 功能描述:SCR THY 12A 50V SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N6395 | 功能描述:SCR 100V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N6395G | 功能描述:SCR THY 12A 100V SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N6396 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:CASE TO-220AB |
| 2N6397 | 功能描述:SCR 400V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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