參數(shù)資料
型號(hào)： 2N6395
廠商： ON SEMICONDUCTOR
元件分類： 晶閘管
英文描述： 12 Ampere RMS Reverse Blocking Thyristor(12A（均方根值），100V硅控整流器反向截止晶閘管)
中文描述： 12 A, 100 V, SCR, TO-220AB
封裝： CASE 221A-07, 3 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 111K
代理商： 2N6395
Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 2
1
Publication Order Number:
2N6394/D
Preferred Device
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies.
Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 Volts
Device Marking: Logo, Device Type, e.g., 2N6394, Date Code
*MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to 125
°
C, Sine Wave,
50 to 60 Hz, Gate Open)
2N6394
2N6395
2N6397
2N6399
Symbol
Value
Unit
VDRM,
VRRM
50
100
400
800
Volts
On-State RMS Current
(180
°
Conduction Angles; TC = 90
°
C)
IT(RMS)
12
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = 125
°
C)
ITSM
100
A
Circuit Fusing (t = 8.3 ms)
I2t
40
A2s
Forward Peak Gate Power
(Pulse Width
≤
1.0
μ
s, TC = 90
°
C)
PGM
20
Watts
Forward Average Gate Power
(t = 8.3 ms, TC = 90
°
C)
PG(AV)
0.5
Watts
Forward Peak Gate Current
(Pulse Width
≤
1.0
μ
s, TC = 90
°
C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
–40 to
+125
°
C
Storage Temperature Range
Tstg
–40 to
+150
°
C
*Indicates JEDEC Registered Data
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
2N6394
TO220AB
500/Box
2N6395
TO220AB
2N6397
TO220AB
http://onsemi.com
500/Box
500/Box
K
G
A
TO–220AB
CASE 221A
STYLE 3
123
4
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
2N6399
TO220AB
500/Box
相關(guān)PDF資料
PDF描述
2N6397 12 Ampere RMS Reverse Blocking Thyristor(12A（均方根值），400V硅控整流器反向截止晶閘管)
2N6394 SCRs 12 AMPERES RMS 50 thru 800 VOLTS
2N6395 SCRs 12 AMPERES RMS 50 thru 800 VOLTS
2N6397 SCRs 12 AMPERES RMS 50 thru 800 VOLTS
2N6398 SCRs 12 AMPERES RMS 50 thru 800 VOLTS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6395G 功能描述:SCR THY 12A 100V SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
2N6396 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:CASE TO-220AB
2N6397 功能描述:SCR 400V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
2N6397G 功能描述:SCR THY 12A 400V SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
2N6397T 功能描述:SCR 400V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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