參數(shù)資料
型號(hào): 2N6395
廠商: MOTOROLA INC
元件分類: 晶閘管
英文描述: SCRs 12 AMPERES RMS 50 thru 800 VOLTS
中文描述: 12 A, 100 V, SCR, TO-220AB
封裝: CASE 221A, 3 PIN
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 112K
代理商: 2N6395
1
Motorola Thyristor Device Data
Motorola, Inc. 1999
Reverse Blocking Triode Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies.
Glass Passivated Junctions with Center Gate Geometry for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High
Heat Dissipation and Durability
Blocking Voltage to 800 Volts
*MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(Gate Open, TJ = –40 to 125
°
C)
2N6394
2N6395
2N6397
2N6398
2N6399
VDRM, VRRM
50
100
400
600
800
Volts
RMS On–State Current (TC = 90
°
C) (All Conduction Angles)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 125
°
C)
IT(RMS)
ITSM
12
Amps
100
Amps
Circuit Fusing (t = 8.3 ms)
I2t
40
A2s
Forward Peak Power
PGM
PG(AV)
IGM
TJ
Tstg
20
Watts
Forward Average Gate Power
0.5
Watt
Forward Peak Gate Current
2
Amps
Operating Junction Temperature Range
–40 to +125
°
C
Storage Temperature Range
–40 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2
°
C/W
*Indicates JEDEC Registered Data.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N6394/D
SEMICONDUCTOR TECHNICAL DATA
REV 1
CASE 221A-07
(TO-220AB)
STYLE 3
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
K
A
G
Motorola preferred devices
相關(guān)PDF資料
PDF描述
2N6397 SCRs 12 AMPERES RMS 50 thru 800 VOLTS
2N6398 SCRs 12 AMPERES RMS 50 thru 800 VOLTS
2N6399 SCRs 12 AMPERES RMS 50 thru 800 VOLTS
2N6399 12 Ampere RMS Reverse Blocking Thyristor(12A(均方根值),800V硅控整流器反向截止晶閘管)
2N6400 16 Ampere RMS Reverse Blocking Thyristor(16A(均方根值),50V硅控整流器反向截止晶閘管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6395G 功能描述:SCR THY 12A 100V SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
2N6396 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:CASE TO-220AB
2N6397 功能描述:SCR 400V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
2N6397G 功能描述:SCR THY 12A 400V SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
2N6397T 功能描述:SCR 400V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube