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參數(shù)資料
| 型號(hào)： | 2N6388G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS |
| 中文描述： | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 2N6388G |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 12
1
Publication Order Number:
2N6387/D
2N6387, 2N6388
2N6388 is a Preferred Device
Plastic MediumPower
Silicon Transistors
These devices are designed for generalpurpose amplifier and
lowspeed switching applications.
Features
High DC Current Gain h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
CollectorEmitter Sustaining Voltage @ 100 mAdc
V
CEO(sus)
= 60 Vdc (Min) 2N6387
= 80 Vdc (Min) 2N6388
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 5.0 Adc 2N6387, 2N6388
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
TO220AB Compact Package
PbFree Packages are Available*
MAXIMUM RATINGS
(Note 1)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
2N6387
2N6388
V
CEO
60
80
Vdc
CollectorBase Voltage
2N6387
2N6388
V
CB
60
80
Vdc
EmitterBase Voltage
V
EB
5.0
Vdc
Collector Current Continuous
Peak
I
C
10
15
Adc
Base Current
I
B
250
mAdc
Total Power Dissipation @ T
C
= 25 C
Derate above 25 C
P
D
65
0.52
W
W/
°
C
Total Power Dissipation @ T
A
= 25 C
Derate above 25 C
P
D
2.0
0.016
W
W/
°
C
Operating and Storage Junction,
Temperature Range
T
J
, T
stg
65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
R
JC
1.92
C/W
Thermal Resistance, JunctiontoAmbient
R
JA
62.5
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
DARLINGTON NPN SILICON
POWER TRANSISTORS
8 AND 10 AMPERES
65 WATTS, 60 80 VOLTS
TO220AB
CASE 221A
STYLE 1
123
4
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
2N638x = Device Code
x = 7 or 8
G
= PbFree Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MARKING
DIAGRAM
2N638xG
AYWW
2N6388
2N6388G
TO220AB
TO220AB
(PbFree)
50 Units / Rail
50 Units / Rail
Device
Package
Shipping
2N6387
2N6387G
TO220AB
TO220AB
(PbFree)
50 Units / Rail
50 Units / Rail
ORDERING INFORMATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6388 | Plastic Medium Power Silicon Transistors(10A，65W，80V（集電極-發(fā)射極），塑料，硅NPN中等功率晶體管) |
| 2N6394G | Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS |
| 2N6395G | Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS |
| 2N6397G | Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS |
| 2N6399G | Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N638A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 5A I(C) | TO-3 |
| 2N638B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-3 |
| 2N639 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 40V 5A 5W BCE NPN |
| 2N6394 | 功能描述:SCR 50V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N6394/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon Controlled Rectifiers |
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