參數(shù)資料
型號: 2N6388G
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS
中文描述: 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 87K
代理商: 2N6388G
2N6387, 2N6388
http://onsemi.com
2
80
40
20
0
20
40
80
100
120
160
Figure 1. Power Derating
T, TEMPERATURE (
°
C)
P
60
T
A
4.0
T
C
2.0
1.0
3.0
0
60
140
T
A
T
C
ON CHARACTERISTICS
(Note 3)
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
ELECTRICAL CHARACTERISTICS
(T
C
= 25 C unless otherwise noted) (Note 2)
Characteristic
OFF CHARACTERISTICS
2N6387
Symbol
Min
Max
Unit
2N6388
(V
CE
= 60 Vdc, I
B
= 0)
1.0
(V
= 60 Vdc, V
= 1.5 Vdc)
CE
EB(off)
(V
CE
= 80 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 125 C)
2N6388
300
3.0
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0)
DC Current Gain
(I
C
= 1 0 Adc, V
CE
= 3.0 Vdc)
I
EBO
5.0
mAdc
2N6387, 2N6388
(I
C
= 5.0 Adc, I
B
= 0.01 Adc)
2N6387, 2N6388
2.0
(I
= 5.0 Adc, V
= 3.0 Vdc)
C
CE
4.5
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain (I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, f
test
= 1.0 MHz)
|h
fe
|
20
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
200
pF
C
CE
fe
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